In addition to its ubiquitous fame in optoelectronics, halide-perovskites (HPs) have additionally carved a distinct segment within the area of resistive switching reminiscences (Re-RAMs). Nonetheless owing to materials and electrical instability challenges that embody HP thin-films, hardly ever perovskite Re-RAMs are used to experimentally reveal knowledge processing which is a elementary requirement for neuromorphic purposes. Right here, in a primary, lead-free, ultrahigh density HP nanowire (NW) array Re-RAM has been utilized to reveal picture processing by way of design of convolutional kernels. The units exhibited superior switching traits together with excessive endurance of 5×10^6 cycles, ultra-fast erasing and writing velocity of 900 ps and a pair of ns respectively and > 5×10^4 s retention time for the resistances. The work is bolstered by in depth mechanistic examine and first precept simulations which bear proof of electrochemical metallization triggering the switching. Using the sturdy multi-level switching trait, picture processing capabilities of embossing, outlining and sharpening had been efficiently applied.